Voltage gain enhancement by conductance cancellation in GaAs MESFET opamps

Author

Xiao, Shuo ; Salama, C. Andre T

Author_Institution

Dept. of Electr. Eng., Toronto Univ., Ont., Canada

fYear

1993

fDate

3-6 May 1993

Firstpage

1073

Abstract

GaAs MESFET analog circuits have relatively low gain. To enhance the gain, positive feedback can be used to allow output conductance cancellation between the drive and active load transistors. This decreases the effective output conductance and increases the voltage gain of the amplifying stage without the need for cascode stages. A GaAs MESFET operational amplifier using this scheme, implemented in a 1-μm non-self-aligned GaAs technology, achieves a DC gain of 60 dB and a bandwidth of 840 MHz

Keywords

III-V semiconductors; MESFET integrated circuits; circuit feedback; feedback amplifiers; field effect analogue integrated circuits; gallium arsenide; operational amplifiers; wideband amplifiers; 1 micron; 60 dB; 840 MHz; GaAs; MESFET analog circuits; MESFET opamps; conductance cancellation; non-self-aligned GaAs technology; op amp; operational amplifier; output conductance; positive feedback; voltage gain enhancement; Driver circuits; Equations; FETs; Gallium arsenide; Impedance; Insulation; Integrated circuit technology; MESFETs; Output feedback; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-1281-3

Type

conf

DOI

10.1109/ISCAS.1993.393920

Filename

393920