• DocumentCode
    2607745
  • Title

    Failure Analysis of Passive Devices

  • Author

    Mann, John E.

  • Author_Institution
    Rockwell International Corporation, Anaheim, CA 92803. (714)632-5506
  • fYear
    1978
  • fDate
    28581
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    The failure analysis of passive devices requires all the skills and technology used in the failure analysis of solid state devices. Passive devices use similar manufacturing methods compared to solid state techniques to accomplish the finished device. Thin oxides, used in the manufacturing of tantalum slug capacitors, are subject to current and voltage transients which concern analysts on MOS structures. To create the K factor in the dielectric of ceramic capacitors, ppm´s of additives are used. These can be more difficult than diffusions in determining their effect on the device performance. Resistors suffer from all the structural effects of moisture, voltage transients, or contamination reported in the studies on integrated circuits or hybrids. Filters and small inductors packaged for circuit application are subject to problems of handling and board insertion as well as the above mentioned failure modes. In the choice of analyzing a passive component over an integrated circuit or LSI circuit, there are times when many analysts would rather accept the more complicated solid state circuit rather than tackle the simple passive unit.
  • Keywords
    Ceramics; Dielectrics; Failure analysis; MOS capacitors; Manufacturing; Moisture; Resistors; Solid state circuits; Transient analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1978. 16th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1978.362827
  • Filename
    4208217