DocumentCode
2607745
Title
Failure Analysis of Passive Devices
Author
Mann, John E.
Author_Institution
Rockwell International Corporation, Anaheim, CA 92803. (714)632-5506
fYear
1978
fDate
28581
Firstpage
89
Lastpage
92
Abstract
The failure analysis of passive devices requires all the skills and technology used in the failure analysis of solid state devices. Passive devices use similar manufacturing methods compared to solid state techniques to accomplish the finished device. Thin oxides, used in the manufacturing of tantalum slug capacitors, are subject to current and voltage transients which concern analysts on MOS structures. To create the K factor in the dielectric of ceramic capacitors, ppm´s of additives are used. These can be more difficult than diffusions in determining their effect on the device performance. Resistors suffer from all the structural effects of moisture, voltage transients, or contamination reported in the studies on integrated circuits or hybrids. Filters and small inductors packaged for circuit application are subject to problems of handling and board insertion as well as the above mentioned failure modes. In the choice of analyzing a passive component over an integrated circuit or LSI circuit, there are times when many analysts would rather accept the more complicated solid state circuit rather than tackle the simple passive unit.
Keywords
Ceramics; Dielectrics; Failure analysis; MOS capacitors; Manufacturing; Moisture; Resistors; Solid state circuits; Transient analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1978.362827
Filename
4208217
Link To Document