Title :
Semiconducting graphite oxide films for large scale carbon based electronics
Author :
Han, Song ; Minsheng Wang ; Gilje, Scott ; Kaner, Richard B. ; Wang, Kang L.
Author_Institution :
MARCO FENA Center, Univ. of California, Los Angeles, CA
Abstract :
Single sheet graphite oxide films are synthesized by intercalation and exfoliation routes of graphite. Those insulating graphite oxide films were deposited on SiO2/Si substrates and reduced to semiconducting graphene. Field effect transistors of these graphite oxide and graphene films were fabricated. The transport properties of the devices were studied before and after the reduction reaction. Such method opens up the possibility of preparing high quality, large area and manufacturable graphene films with low cost.
Keywords :
carbon; carbon compounds; field effect transistors; graphite; insulating thin films; nanoelectronics; semiconductor thin films; thin film transistors; C; Si; SiO2-Si; exfoliation route; field effect transistors; insulating graphite oxide films; intercalation route; large scale carbon based electronics; reduction reaction; semiconducting graphene; semiconducting graphite oxide films; single sheet graphite oxide films; thin film circuits; thin film transistors; Carbon nanotubes; Costs; Large-scale systems; Powders; Semiconductivity; Semiconductor films; Substrates; Temperature; Thin film circuits; USA Councils; Graphite oxide; semiconductor devices; thin film circuits; transistors;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601391
