Scanning Electron Microscopy for Complex Microcircuit Analysis

Scanning electron microscopy has become an important approach to evaluating both the structural and electrical causes of device failure in complex large scale integrated circuits. This paper will review current activities within the Reliability Branch at RADC which cover assessing device electrical operation using the voltage contrast mode of SEM operation. Important features of the SEM will be described along with a comparison of the voltage contrast information with the data obtained on identical circuits using field effect liquid crystal display techniques. The limitations of SEM analysis of surface sensitive devices will be discussed along with recommendations for a multi-technique approach to complex microcircuit reliability evaluation.