• DocumentCode
    2607834
  • Title

    High performance ZnO nanowire field effect transistor

  • Author

    Cha, S.N. ; Jang, J.E. ; Choi, Y. ; Ho, G.W. ; Kang, D.-J. ; Hasko, D.G. ; Welland, M.E. ; Amaratunga, G.A.J.

  • Author_Institution
    Dept. of Eng., Cambridge Univ., UK
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    217
  • Lastpage
    220
  • Abstract
    A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nanoscale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 μS, a mobility of 450 cm2/Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 106.
  • Keywords
    II-VI semiconductors; high electron mobility transistors; nanoelectronics; nanowires; zinc compounds; ZnO; electron mobility; nanowire field effect transistor; self-aligned gate electrodes; Chemicals; Dielectrics and electrical insulation; Electrodes; FETs; Fabrication; MOSFETs; Niobium; Semiconductivity; Semiconductor materials; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546624
  • Filename
    1546624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2607834