Impact of point defect location in nanowire silicon MOSFETs

Author

Bescond, Marc ; Cavassilas, Nicolas ; Nehari, Karim ; Autran, Jean-Luc ; Lannoo, Michel ; Asenov, Asen

Author_Institution

Glasgow Univ., UK

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

221

Lastpage

224

Abstract

This paper discusses the influence of a single impurity location on the drain current in silicon nanowire MOSFETs. A careful description of point defects in a 3D quantum simulator has been implemented. The modeling scheme is based on the nonequilibrium Green´s function method (NEGF) self-consistently coupled to the solution of the 3D Poisson´s equation. The impact of the defect location on the device parameters and current characteristics is studied in details. The results show that a small variation in the position of a single impurity in the channel may significantly (up to one order of magnitude) modifies the drain current.

Keywords

Green´s function methods; MOSFET; Poisson equation; impurity-defect interactions; nanowires; point defects; semiconductor device models; 3D quantum simulation; Poisson equation; Si; nonequilibrium Green function method; point defect location; silicon nanowire MOSFET; single impurity location; CMOS technology; Chemicals; Doping; Fluctuations; Green´s function methods; MOSFETs; Nanoscale devices; Poisson equations; Semiconductor impurities; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546625

Filename

1546625