DocumentCode
2607957
Title
Improved Reliability and Yield in Thin Thermal SiO2
Author
Wang, S.T. ; Harari, E. ; Nielsen, W.Y.
Author_Institution
Newport Beach Research Center, Hughes Aircraft Company, Newport Beach, California 92663. (714)759-2472
fYear
1978
fDate
28581
Firstpage
137
Lastpage
139
Abstract
The influence of processing parameter on the incidence of dielectric breakdowns in thermally grown thin oxides has been investigated. Statistical data shows that the difference between wet and dry oxides is not significant. However, the addition of 5% HCl during oxidation drastically improves both the yield and breakdown strength and reduces the incidence of breakdowns in the thin oxides.
Keywords
Breakdown voltage; Capacitors; Dielectric breakdown; Electric breakdown; Electrodes; Electron traps; Oxidation; Probes; Testing; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1978.362837
Filename
4208227
Link To Document