Temperature dependence of avalanche multiplication in submicron silicon devices

Photomultiplication initiated by both pure electron and pure hole injection has been measured in submicron Si p⁺-i-n⁺ and n⁺-i-p⁺ diodes with a variety of intrinsic region thicknesses and at temperatures between 15 and 420 K. A local analysis yields expressions for the ionization coefficients as functions of electric field and of temperature which obey Chynoweth´s law. Multiplication at various temperatures is computed and compares favorably with experiment.