DocumentCode :
2608001
Title :
Electrostatic Damage Susceptibility of Semiconductor Devices
Author :
Schreier, L.A.
Author_Institution :
Technology Support Division, Hughes Aircraft Company, Culver City, CA 90230
fYear :
1978
fDate :
28581
Firstpage :
151
Lastpage :
153
Abstract :
Various semiconductor devices were tested for susceptibility to electrostatic discharge (ESD). A circuit similar to the ESD test circuit described in Military Specification MIL-M-38510 slash sheets was used for testing. Devices were also subjected to ESD levels equivalent to 75 percent of the device ESD degradation threshold and then burned-in to see if low-level ESD affects device reliability in system use. A ranking of devices in terms of ESD susceptibility and failure rate during burn-in is provided.
Keywords :
Aircraft; Circuit testing; Electrostatic discharge; FETs; Manufacturing; Power supplies; Schottky diodes; Semiconductor devices; Semiconductor diodes; Thermal degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location :
San Diego, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1978.362840
Filename :
4208230
Link To Document :
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