High-speed InP-based resonant tunneling diode on silicon substrate

Author

Prost, W. ; Khorenko, V. ; Mofor, A.-C. ; Bakin, A. ; Khorenko, E. ; Ehrich, S. ; Wehmann, H.-H. ; Schlachetzki, A. ; Tegude, F.J.

Author_Institution

Dept. of Solid-State Electron., Duisburg-Essen Univ., Duisburg, Germany

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

257

Lastpage

260

Abstract

A technology for high speed and high performance III-V semiconductor devices on silicon substrate has been developed. It consists of an InP-on-Si quasi-substrate exhibiting an XRD FWHM as low as 86 arcsec, followed by a low-temperature (370°C) grown InAlAs layer. The surface roughness is reduced to 1.9 nm along with an almost complete elimination of surface defects. The applicability is experimentally verified for InP-based resonant tunneling diodes exhibiting a speed index of 32 ps/V indicating a potentially low-cost technology for high functionality circuits operating above 10 Gb/s.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; high-speed techniques; indium compounds; resonant tunnelling diodes; silicon; substrates; surface roughness; 370 C; III-V semiconductor devices; InP-Si-InAlAs; high functionality circuits; high speed resonant tunneling diodes; low-cost technology; semiconductor quasi-substrate; silicon substrates; surface defect elimination; surface roughness; III-V semiconductor materials; Indium compounds; Resonant tunneling devices; Rough surfaces; Semiconductor devices; Semiconductor diodes; Silicon; Substrates; Surface roughness; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546634

Filename

1546634