• DocumentCode
    2608056
  • Title

    Characterization and modeling of Al2O3 MIM capacitors: temperature and electrical field effects

  • Author

    Bécu, S. ; Crémer, S. ; Noblanc, O. ; Autran, J.-L. ; Delpech, P.

  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    265
  • Lastpage
    268
  • Abstract
    This paper deals with the capacitance response of metal-insulator-metal (MIM) structures with 15 nm thick Al2O3 as dielectric. Electrical characterizations between 100 K and 450 K have been performed to study the temperature effect on the capacitance. An original model assuming that the permanent moment of the polar molecules in the Al2O3 film grows linearly with temperature is exposed to explain the experimental results.
  • Keywords
    MIM devices; aluminium compounds; capacitors; dielectric materials; electric field effects; semiconductor device models; 100 to 450 K; 15 nm; Al2O3; MIM capacitors; capacitance response; electrical characterization; electrical field effects; metal-insulator-metal structures; permanent moment; polar molecules; temperature effects; Capacitance; Capacitance-voltage characteristics; Dielectric materials; MIM capacitors; Microelectronics; Passive filters; Radio frequency; Semiconductor device modeling; Temperature dependence; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546636
  • Filename
    1546636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2608056