• DocumentCode
    2608116
  • Title

    Distinction of intrinsic and extrinsic breakdown failure modes of Cu/low-k interconnects

  • Author

    Hwang, Nam ; Tan, Tam Lyn ; Gan, Chee Lip

  • Author_Institution
    Inst. of Microelectron., Singapore, Singapore
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    273
  • Lastpage
    276
  • Abstract
    Three distinct leakage current profiles in a Cu/low-k interconnect systems were observed from breakdown voltage characterization. Consequently, extrinsic and intrinsic failure modes are able to be distinguishable based on the I-V profile showing the different temperature dependence and statistical distribution. Normal distribution statistical analysis further attested the different failure mechanisms obtained, and the physical failure analysis was performed to show the breakdown failure mechanism of Cu/low-k interconnect systems.
  • Keywords
    copper; electric breakdown; failure analysis; integrated circuit interconnections; leakage currents; low-k dielectric thin films; statistical analysis; statistical distributions; Cu; breakdown failure mechanism; breakdown voltage characterization; extrinsic breakdown failure mode; failure analysis; intrinsic breakdown failure mode; leakage currents; low-k interconnects; statistical distribution; Breakdown voltage; Copper; Dielectrics; Electric breakdown; Failure analysis; Leakage current; Materials science and technology; Silicon carbide; Stress; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546638
  • Filename
    1546638