DocumentCode
2608116
Title
Distinction of intrinsic and extrinsic breakdown failure modes of Cu/low-k interconnects
Author
Hwang, Nam ; Tan, Tam Lyn ; Gan, Chee Lip
Author_Institution
Inst. of Microelectron., Singapore, Singapore
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
273
Lastpage
276
Abstract
Three distinct leakage current profiles in a Cu/low-k interconnect systems were observed from breakdown voltage characterization. Consequently, extrinsic and intrinsic failure modes are able to be distinguishable based on the I-V profile showing the different temperature dependence and statistical distribution. Normal distribution statistical analysis further attested the different failure mechanisms obtained, and the physical failure analysis was performed to show the breakdown failure mechanism of Cu/low-k interconnect systems.
Keywords
copper; electric breakdown; failure analysis; integrated circuit interconnections; leakage currents; low-k dielectric thin films; statistical analysis; statistical distributions; Cu; breakdown failure mechanism; breakdown voltage characterization; extrinsic breakdown failure mode; failure analysis; intrinsic breakdown failure mode; leakage currents; low-k interconnects; statistical distribution; Breakdown voltage; Copper; Dielectrics; Electric breakdown; Failure analysis; Leakage current; Materials science and technology; Silicon carbide; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546638
Filename
1546638
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