Electromigration of Al-Si Alloy Films

The electromigration characteristics of Al/Si alloys are presented. Below about 210°C the failure mode is an open circuit generated by grain boundary electromigration of Al in Al with an activation energy of 0.54 eV. At higher temperatures the failure mechanism transfers to the electromigration of Si in Al through dislocations with an activation energy of 0.89 eV. The failure is either a shunted junction at (-) ohmic contacts to the metal or an increase in resistance at (+) ohmic contacts.