• DocumentCode
    2608220
  • Title

    Electromigration of Al-Si Alloy Films

  • Author

    Black, James R.

  • Author_Institution
    Motorola Semiconductor Products Group, 5005 E. McDowell Road, Phoenix, Arizona 85008. (602) 244-6201
  • fYear
    1978
  • fDate
    28581
  • Firstpage
    233
  • Lastpage
    240
  • Abstract
    The electromigration characteristics of Al/Si alloys are presented. Below about 210°C the failure mode is an open circuit generated by grain boundary electromigration of Al in Al with an activation energy of 0.54 eV. At higher temperatures the failure mechanism transfers to the electromigration of Si in Al through dislocations with an activation energy of 0.89 eV. The failure is either a shunted junction at (-) ohmic contacts to the metal or an increase in resistance at (+) ohmic contacts.
  • Keywords
    Aluminum alloys; Crystals; Electromigration; Failure analysis; Ohmic contacts; Semiconductor device manufacture; Semiconductor films; Silicon alloys; Solid state circuits; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1978. 16th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1978.362852
  • Filename
    4208242
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2608220