Nanoscale switching junctions based on an organic monolayer of molecules and solid electrolytes

We report an innovative method of fabricating atomic switching junctions using an LB film of cadmium stearate in the gap between an inert electrode and a chalcogenide solid electrolyte. The thickness of the monolayer is about 2.8 nm and it helps ensure a constant gap size maintaining identical characteristics in a large number of switching junctions. We used a new energetic plasma process to create the chalcogenide solid electrolyte using a sulfur containing plasma for converting thin films of copper into a mix of covelite phase CuS and chalcocite phase Cu₂S.