A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation presented in I. Bloom et al. (1991), P. Dierickx et al. (1992), E. A. M. Klumperink et al. (2000), H. Tian et al. (2001) and J. S. Kolhatkar et al. (2004). These observations can become very relevant for analog and RF circuit design as stated in E. A. M. Klumperink et al. (2000) and J. Koh et al. (2004). The classically used low frequency noise models for circuit simulation are not able to explain the effect. In this paper, we extend the models to nonequilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition we present measurements in good agreement with the derived model, and suggest how to implement it into standard compact models.