Title :
Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown
Author :
Crook, Dwight L.
Author_Institution :
Intel Corporation, 3585 S. W. 198th Avenue, Aloha, Oregon 97005
Abstract :
Time dependent dielectric breakdown on MOS LSI circuits is a function of stress voltage, temperature, device area and latent defect density. A model for time dependent dielectric breakdown as a function of these parameters has been developed. This model has been empirically verified on test structures, as well as actual memory devices. A discussion of how this model is used to determine reliability screens for time dependent dielectric breakdown is presented.
Keywords :
Acceleration; Capacitors; Density functional theory; Dielectric breakdown; Dielectric devices; Equations; Large scale integration; Temperature; Thermal factors; Thermal stresses;
Conference_Titel :
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IRPS.1979.362863
