On the modulation phase efficiency of a silicon p-i-n diode optical modulator

Author

Hanim, A.R. ; Mardiana, B. ; Hazura, H. ; Saari, Sahbudin

Author_Institution

Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia

fYear

2010

fDate

5-7 July 2010

Firstpage

1

Lastpage

3

Abstract

This paper highlights the study of carrier injection effect on silicon waveguide with p-i-n diode structure integrated on Silicon-on-Insulator (SOI). The device performance is predicted using 2D Silvaco CAD software under different applied voltages at wavelength 1.3 and 1.55 μm. Lπ and VπLπ is minimized at a greater applied voltage. Operating at 1.55 μm is proven to be more efficient in terms of length of the modulator, Lπ and modulation phase efficiency. At 0.75V, Lπ and VπLπ are 0.527711 cm and 0.39578 Vcm respectively. Meanwhile, at 1V, Lπ and VπLπ are 0.01303 cm and 0.013029Vcm respectively. Therefore, a greater voltage is suggested for a shorter device length and greater modulation efficiency.

Keywords

electro-optical modulation; elemental semiconductors; integrated optics; integrated optoelectronics; optical waveguides; p-i-n photodiodes; silicon; silicon-on-insulator; 2D Silvaco CAD software; SOI; Si; carrier injection; integrated structure; modulation phase efficiency; silicon p-i-n diode optical modulator; silicon photonic devices; silicon waveguide; silicon-on-insulator; voltage 0.75 V; voltage 1 V; wavelength 1.3 mum to 1.55 mum; Facsimile; Integrated optics; Optical modulation; Photonics; Silicon; Silicon-on-Insulator; carrier injection; modulation phase efficiency; p-i-n diode modulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics (ICP), 2010 International Conference on

Conference_Location

Langkawi

Print_ISBN

978-1-4244-7186-7

Type

conf

DOI

10.1109/ICP.2010.5604386

Filename

5604386