Detection of THz electromagnetic radiation with Si/SiGe HFET

Author

Richard, Soline ; Zerounian, Nicolas ; Boucaud, Philippe ; Ortega, Jean-Michel ; Hackbarth, Thomas ; Herzog, Hans-Joest ; Aniel, Frederick

Author_Institution

Inst. d´´Electronique Fondamentale, Univ. Paris, Orsay, France

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

363

Lastpage

366

Abstract

We report an investigation on THz signal detection using plasma instabilities in two-dimensional electron gas of a tensile strained silicon quantum well of Si/SiGe hetero-FET. It is, to our knowledge, the first measurements of THz nonlinear behaviour in such silicon-based devices. We discuss the key parameters which are controlling detection and oscillation in THz range. It appears that strained channel Si-based devices are well suited for such applications.

Keywords

Ge-Si alloys; elemental semiconductors; high electron mobility transistors; semiconductor quantum wells; signal detection; silicon; submillimetre wave propagation; submillimetre wave transistors; submillimetre waves; SiGe-Si; THz signal detection; electromagnetic radiation detection; electron gas; heteroFET; plasma instabilities; silicon quantum well; Electromagnetic radiation; Germanium silicon alloys; HEMTs; MODFETs; Plasma devices; Plasma measurements; Radiation detectors; Signal detection; Silicon germanium; Silicon radiation detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546660

Filename

1546660