• DocumentCode
    2608756
  • Title

    The effect of Y2O3 buffer layer for La2O3 gate dielectric film

  • Author

    Nakagawa, Kentaro ; Miyauchi, Kunihiro ; Kakushima, Kuniyuki ; Hattori, Takeo ; Tsutsui, Kazuo ; Iwai, Hiroshi

  • Author_Institution
    Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Japan
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    387
  • Lastpage
    390
  • Abstract
    La2O2, Y2O3 and La2O3/Y2O3 stack dielectric films were deposited on silicon by electron-beam evaporation. Chemical and electrical analyses of the interfacial growths of these films with silicon after heat treatment are performed comparatively. X-ray photoelectron spectroscopy (XPS) analysis reveals that Y2O3 layer suppresses the formation of SiO2 at the interface. The Y2O3 layer also reduces the hysteresis in capacitance-voltage characteristics and leakage current without changing the equivalent oxide thickness (EOT).
  • Keywords
    X-ray photoelectron spectra; buffer layers; dielectric thin films; lanthanum compounds; leakage currents; silicon compounds; yttrium compounds; La2O3; SiO2; X-ray photoelectron spectroscopy analysis; Y2O3; buffer layer; dielectric film; electron beam evaporation; equivalent oxide thickness; heat treatment; hysteresis; interfacial growths; leakage current; Capacitance-voltage characteristics; Chemical analysis; Dielectric films; Heat treatment; Hysteresis; Performance analysis; Resistance heating; Semiconductor films; Silicon; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546666
  • Filename
    1546666
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2608756