Title :
New perspectives on NBTI in advanced technologies: modelling & characterization
Author :
Denais, Mickael ; Huard, Vincent ; Parthasarathy, Chittoor ; Ribes, Guillaume ; Perrier, Franck ; Roy, David ; Bravaix, Alain
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This work presents new perspectives of the NBTI in advanced technology. Both modelling and characterization of NBTI are investigated for the maturation of the reliability management in advanced node technologies. A physical-based VT instability model is presented considering interface trapped charges, fixed charges and oxide trapped holes effects. Finally, we discuss on the lifetime concept in the case of recoverable NBTI-induced degradation.
Keywords :
MOSFET; interface states; semiconductor device breakdown; semiconductor device reliability; NBTI; VT instability model; fixed charges effects; interface trapped charges; oxide trapped holes effects; reliability management; Annealing; CMOS technology; Degradation; Diffusion bonding; Hydrogen; Niobium compounds; Semiconductor device modeling; Stress; Technology management; Titanium compounds;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546669
