New modeling technique for memristor devices to cover deviation from memristive theory

Behavior of metal-oxide junctions has been addressed as a memristive behavior after 2008. This behavior is not exactly matched with memristive behavior. Extension of memristive theory is needed to match device behavior. In this paper, we present a modeling technique to model these junctions and show how and why their behavior is not exactly memristive behavior. Simulation results verify the proposed model and fit the measurement results.