65nm LP/GP mix low cost platform for multi-media wireless and consumer applications

Author

Tavel, B. ; Duriez, B. ; Gwoziecki, R. ; Basso, M.T. ; Julien, C. ; Ortolland, C. ; Laplanche, Y. ; Fox, R. ; Saboure, E. ; Detcheverry, C. ; Boeuf, F. ; Morin, P. ; Barge, D. ; Bidaud, M. ; Biénacel, J. ; Garnier, P. ; Cooper, K. ; Chapon, J.D. ; Trouill

Author_Institution

Philips Semicond., Crolles, France

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

423

Lastpage

426

Abstract

A complete 65nm CMOS platform, called LP/GP mix, has been developed employing thick oxide transistor (1.0), low power (LP) and general purpose (GP) devices on the same chip. Dedicated to wireless multi-media and consumer applications, this new triple gate oxide platform is low cost (+mask only) and saves over 35% of dynamic power with the use of the low operating voltage GP. The LP/GP mix shows competitive digital performance with a ring oscillator (FO=1) speed equal to 7ps per stage (GP) and 6T-SRAM static power lower than 1 Op A/cell (LP). Compatible with mixed-signal design requirements, transistors show high voltage gain, low mismatch factor and low flicker noise. Moreover, to address mobile phone demands, excellent RF performance has been achieved with F_T=160GHz for LP nMOS transistors.

Keywords

MOSFET; low-power electronics; mobile handsets; multimedia communication; 65 nm; 6T-SRAM; CMOS platform; LP nMOS transistors; flicker noise; general purpose devices; low power devices; mixed-signal design; mobile phone; ring oscillator; thick oxide transistor; wireless multimedia; 1f noise; Costs; Low voltage; MOSFETs; Mobile handsets; Multimedia systems; Power generation; Radio frequency; Ring oscillators; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546675

Filename

1546675