DocumentCode
2608952
Title
Silicidation induced strain phenomena in totally silicided (TOSI) gate transistors
Author
Mondot, A. ; Müller, M. ; Aimé, D. ; Froment, B. ; Cacho, F. ; Talbot, A. ; Leverd, F. ; Rivoire, M. ; Morand, Y. ; Descombes, S. ; Besson, P. ; Toffoli, A. ; Pokrant, S. ; Skotnicki, T.
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
427
Lastpage
430
Abstract
In this paper, we present a detailed analysis of the performance and transport characteristics in totally Ni silicided (TOSI) devices. For two different TOSI integration schemes, we study transconductance variations of TOSI devices with respect to poly-Si gated devices. We find a clear signature of process induced strain related to the total gate silicidation step which depends largely on the integration scheme used for the fabrication of the TOSI devices.
Keywords
MOSFET; chemical mechanical polishing; nickel; semiconductor junctions; Ni; silicidation; strain phenomena; totally silicided gate transistors; transconductance variations; Capacitive sensors; Compressive stress; Conductivity; Dielectrics; Epitaxial growth; Fabrication; Performance analysis; Silicidation; Tensile stress; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546676
Filename
1546676
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