The 10 kV IGCT-a new device for medium voltage drives

Author

Eicher, S. ; Bernet, S. ; Steimer, P. ; Weber, A.

Author_Institution

ABB Semiconductors AG, Lenzburg, Germany

Volume

5

fYear

2000

fDate

2000

Firstpage

2859

Abstract

In order to find the optimum solution for 6.9 kV medium voltage drives (MVD) and power quality applications, IGCT devices with a blocking voltage of up to 10 kV were investigated by numerical device simulation. With such devices, the complicated series connection can be avoided. The new devices fulfill all requirements, including cosmic ray stability, and operation without turnoff snubber. In addition, the maximum output power of a three-level inverter equipped with 10 kV IGCTs was calculated. With careful device design, an apparent output power of the inverter of 5 MVA with a single IGCT switch per position is feasible

Keywords

AC motor drives; DC-AC power convertors; invertors; power semiconductor switches; semiconductor device models; snubbers; thyristor convertors; thyristors; 10 kV; 5 MVA; 6.9 kV; IGCT; apparent output power; blocking voltage; cosmic ray stability; medium voltage drives; numerical device simulation; three-level inverter; turnoff snubber; Circuits; Medium voltage; Power generation; Pulse width modulation; Pulse width modulation inverters; Snubbers; Switches; Switching frequency; Thyristors; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2000. Conference Record of the 2000 IEEE

Conference_Location

Rome

ISSN

0197-2618

Print_ISBN

0-7803-6401-5

Type

conf

DOI

10.1109/IAS.2000.882571

Filename

882571