DocumentCode :
2609132
Title :
Instability and Failure Mechanisms of Small Area, Nitride-Defined Schottky Barrier Diodes, in LSI Applications
Author :
Kim, S.U.
Author_Institution :
IBM General Technology Division, Essex Junction, Vermont 05452
fYear :
1979
fDate :
28946
Firstpage :
226
Lastpage :
233
Keywords :
Equations; Etching; Failure analysis; Integrated circuit technology; Large scale integration; Leakage current; Schottky barriers; Schottky diodes; Silicon; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location :
San Diego, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1979.362898
Filename :
4208291
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2609132
بازگشت