• DocumentCode
    2609215
  • Title

    Low switching losses devices architectures for power management applications integrated in a low cost 0.13μm CMOS technology

  • Author

    Grelu, C. ; Baboux, N. ; Bianchi, R.A. ; Plossu, C.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    477
  • Lastpage
    480
  • Abstract
    This paper presents two power devices architectures designed for 20V and 10V power management switching applications, respectively, the separated drain MOSFET one and the drain extension MOSFET. Global losses are evaluated through Ron*Cgg figure of merit. Electrical results bring forward the dummy gated separated drain MOSFET for 20V application and confirm the drain extension MOSFET as a serious competitor for 10V applications.
  • Keywords
    CMOS integrated circuits; MOSFET; power semiconductor devices; switched mode power supplies; 0.13 micron; 10 V; 20 V; CMOS technology; MOSFET; power devices architectures; power management switching; switching losses; CMOS technology; Capacitance; Costs; Energy management; MOSFET circuits; Power MOSFET; Switches; Switching loss; Technology management; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546688
  • Filename
    1546688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2609215