Title :
Low switching losses devices architectures for power management applications integrated in a low cost 0.13μm CMOS technology
Author :
Grelu, C. ; Baboux, N. ; Bianchi, R.A. ; Plossu, C.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper presents two power devices architectures designed for 20V and 10V power management switching applications, respectively, the separated drain MOSFET one and the drain extension MOSFET. Global losses are evaluated through Ron*Cgg figure of merit. Electrical results bring forward the dummy gated separated drain MOSFET for 20V application and confirm the drain extension MOSFET as a serious competitor for 10V applications.
Keywords :
CMOS integrated circuits; MOSFET; power semiconductor devices; switched mode power supplies; 0.13 micron; 10 V; 20 V; CMOS technology; MOSFET; power devices architectures; power management switching; switching losses; CMOS technology; Capacitance; Costs; Energy management; MOSFET circuits; Power MOSFET; Switches; Switching loss; Technology management; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546688
