Lumped charge PSPICE model for high-voltage IGBTs

Author

Busatto, Giovanni ; Iannuzzo, Francesco ; Grimaldi, Pasquale

Author_Institution

DAEIMI, Cassino Univ., Italy

Volume

5

fYear

2000

fDate

2000

Firstpage

2896

Abstract

A novel physics-based PSPICE IGBT model is presented. Its main peculiarities are the accuracy of the results both at low and high voltages. The employed approach is an evolution of the lumped-charge standard approach, in the sense that it additionally includes an accurate model for depletion capacitances and carrier mobilities, including carrier-carrier scattering. The internal subdivision of the current fluxes into electrons and holes allows a best adherence of the model to the device physics, and permits the inclusion of phenomena affecting single species of carriers. The model has been tested successfully on a commercial IGBT module rated at 3300 V-1200 A

Keywords

SPICE; capacitance; carrier mobility; insulated gate bipolar transistors; semiconductor device models; 1200 A; 3300 V; IGBT module; carrier mobilities; carrier-carrier scattering; current fluxes; depletion capacitances; device physics; electrons; high-voltage IGBT; holes; internal subdivision; lumped charge PSPICE model; lumped-charge standard approach; physics-based PSPICE IGBT model; single carrier species; Capacitance; Charge carrier processes; Electron mobility; Insulated gate bipolar transistors; Lattices; MOSFET circuits; Poisson equations; Power MOSFET; SPICE; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2000. Conference Record of the 2000 IEEE

Conference_Location

Rome

ISSN

0197-2618

Print_ISBN

0-7803-6401-5

Type

conf

DOI

10.1109/IAS.2000.882577

Filename

882577