DocumentCode
2609283
Title
Integration of substrate-isolated high voltage devices in junction isolated technologies
Author
Pendharkar, Sameer
Author_Institution
Texas Instruments Inc., Dallas, TX, USA
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
485
Lastpage
488
Abstract
This paper discusses how the voltage capability of the existing junction isolation (JI) based smart power bipolar-CMOS-DMOS (BCD) technologies for a 12V electrical automotive systems can be easily up-converted to support the new 42V electrical automotive systems. The modular integration and the new high voltage device architecture used to achieve this are also discussed in this paper.
Keywords
BIMOS integrated circuits; isolation technology; power integrated circuits; power semiconductor devices; semiconductor junctions; 12 V; 42 V; automotive systems; high voltage device architecture; junction isolation; smart power bipolar-CMOS-DMOS technologies; Automotive electronics; Automotive engineering; Charge pumps; Circuits; Doping profiles; Electric breakdown; Instruments; Inverters; Isolation technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546690
Filename
1546690
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