Title :
Integration of substrate-isolated high voltage devices in junction isolated technologies
Author :
Pendharkar, Sameer
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
This paper discusses how the voltage capability of the existing junction isolation (JI) based smart power bipolar-CMOS-DMOS (BCD) technologies for a 12V electrical automotive systems can be easily up-converted to support the new 42V electrical automotive systems. The modular integration and the new high voltage device architecture used to achieve this are also discussed in this paper.
Keywords :
BIMOS integrated circuits; isolation technology; power integrated circuits; power semiconductor devices; semiconductor junctions; 12 V; 42 V; automotive systems; high voltage device architecture; junction isolation; smart power bipolar-CMOS-DMOS technologies; Automotive electronics; Automotive engineering; Charge pumps; Circuits; Doping profiles; Electric breakdown; Instruments; Inverters; Isolation technology; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546690
