Engineering high-performance vertical cavity lasers

Author

Lear, K.L. ; Hou, H.Q. ; Hietala, V.M. ; Choquette, K.D. ; Schneider, R.P., Jr.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1996

fDate

8-11 Dec 1996

Firstpage

33

Lastpage

41

Abstract

The cw and high-speed performance of vertical cavity surface emitting laser diodes (VCSELs) are affected by both electrical and optical issues arising from the geometry and fabrication of these devices. Structures with low resistance semiconductor mirrors and Al-oxide confinement layers address these issues and have produced record performance including 50% power conversion efficiency and modulation bandwidths up to 20 GHz at small bias currents

Keywords

high-speed optical techniques; laser mirrors; optical modulation; semiconductor lasers; surface emitting lasers; 20 GHz; 50 percent; Al-oxide confinement layer; AlO; CW high-speed operation; diode laser; electrical loss; heterojunction grading; modulation bandwidth; optical loss; power conversion efficiency; semiconductor mirror; vertical cavity surface emitting laser; Diode lasers; High speed optical techniques; Optical devices; Optical modulation; Optical recording; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Surface resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610054

Filename

610054