DocumentCode :
2609383
Title :
Degradation Model for Device Reliability
Author :
Yu, Chen Cheng
Author_Institution :
International Business Machines Corporation, F91/052, P.O. Box 390, Poughkeepsie, N. Y. 12602
fYear :
1980
fDate :
29312
Firstpage :
52
Lastpage :
54
Abstract :
The model assumes that, under a constant or cyclic stress, device degradation rate is proportional to the existing degradation. The proportionality constant is a positively distributed random variable. The distribution of the amount of degradation tends to be asymptotically lognormal. The general form of the life distribution is derived. Application of this model has been made in analyzing degradation data in thermal resistance, diode leakage, and transistor gain.
Keywords :
Assembly; Condition monitoring; Fatigue; Life testing; Pollution measurement; Random variables; Schottky diodes; Stress; Thermal degradation; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1980.362911
Filename :
4208307
Link To Document :
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