Characterisation of 4H-SiC Schottky diodes for IGBT applications

Author

Johnson, C.M. ; Rahimo, M. ; Wright, N.G. ; Hinchley, D.A. ; Horsfall, A.B. ; Morrison, D.J. ; Knights, A.

Author_Institution

Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK

Volume

5

fYear

2000

fDate

2000

Firstpage

2941

Abstract

Si fast recovery diodes currently limit the performance of many IGBT powered systems. In this paper SiC Schottky diodes are proposed as an alternative technology. High current SiC devices are achieved by parallel connection of a large number of small elements. The static and dynamic performance of the SiC Schottky diodes is evaluated and comparisons made with Si PIN diodes at currents of up to 20 A and DC link voltages of up to 600 V. The results demonstrate the effectiveness of the SiC devices in reducing the overall system losses and the levels of EMI generated by switching transitions

Keywords

Schottky diodes; electromagnetic interference; insulated gate bipolar transistors; interference suppression; losses; semiconductor materials; silicon compounds; 20 A; 4H-SiC Schottky diodes; 600 V; DC link voltages; EMI levels reduction; IGBT applications; Si PIN diodes; Si fast recovery diodes; SiC; dynamic performance; high current SiC diodes; parallel connection; static performance; switching transitions; system losses reduction; Circuits; Frequency; Insulated gate bipolar transistors; Power electronics; Power engineering and energy; Schottky diodes; Semiconductor diodes; Silicon carbide; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2000. Conference Record of the 2000 IEEE

Conference_Location

Rome

ISSN

0197-2618

Print_ISBN

0-7803-6401-5

Type

conf

DOI

10.1109/IAS.2000.882584

Filename

882584