DocumentCode
2609481
Title
CoolMOS-a new approach towards system miniaturization and energy saving
Author
Lorenz, L. ; Zverev, I. ; Mittal, A. ; Hancock, J.
Author_Institution
Infineon Technol., Munich, Germany
Volume
5
fYear
2000
fDate
2000
Firstpage
2974
Abstract
The CoolMOS Technology from Infineon is in most cell electrical parameters superior to the conventional power MOSFET. The entire and very easy variation of switching time di/dt- and dv/dt values open up a wide area in the application from extremely fast switching to the soft switching behaviour. Ruggedness aspects such as avalanche behaviour are excellent. The overall dynamic behaviour gives an outstanding MOS-controlled device
Keywords
avalanche breakdown; energy conservation; power MOSFET; switching; CoolMOS; Infineon; MOS-controlled device; avalanche behaviour; energy saving; fast switching; power MOSFET; ruggedness; soft switching; switching time di/dt values; switching time dv/dt values; system miniaturization; Capacitance; Cost function; Driver circuits; Energy management; Optimized production technology; Power MOSFET; Power electronics; Power system reliability; Semiconductor device doping; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location
Rome
ISSN
0197-2618
Print_ISBN
0-7803-6401-5
Type
conf
DOI
10.1109/IAS.2000.882589
Filename
882589
Link To Document