Three-dimensional atomistic simulation of carbon nanotube FETs with realistic geometry

Author

Fiori, Gianluca ; Iannaccone, Giuseppe ; Lundstrom, Mark ; Klimeck, Gerhard

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Univ. di Pisa, Italy

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

537

Lastpage

540

Abstract

A three-dimensional simulation approach for the investigation of carbon nanotube field effect transistors (CNTFETs) is presented, based on the self-consistent solution of the 3D Poisson-Schrodinger equation with open boundary conditions, within the non-equilibrium Green´s function formalism. This approach enables accurate simulations of transport through ballistic CNTFETs for generic device structures, eliminating the use of ideal geometries, such as coaxial devices, often used in order to simplify the electrostatics of the device.

Keywords

Green´s function methods; Poisson equation; Schrodinger equation; ballistic transport; carbon nanotubes; electrostatics; field effect transistors; nanotube devices; semiconductor device models; 3D Poisson-Schrodinger equation; 3D atomistic simulation; carbon nanotube FET; coaxial devices; electrostatics; generic device structures; non equilibrium Green function formalism; realistic geometry; Boundary conditions; Charge carrier processes; Coaxial components; Computational geometry; Computational modeling; Electrostatics; FETs; Poisson equations; Silicon; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546703

Filename

1546703