DocumentCode
2609590
Title
Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors
Author
Pourfath, M. ; Kosina, H. ; Cheong, B.H. ; Park, W.J. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., TU Vienna, Wien, Austria
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
541
Lastpage
544
Abstract
A study of ohmic contact carbon nanotube field effect transistors is presented. The effect of the gate-drain spacer on the DC and AC response of the device was studied. Simulation results suggest that by appropriately selecting the gate-drain spacer both the DC and AC characteristics of the device are improved.
Keywords
carbon nanotubes; field effect transistors; ohmic contacts; AC response; DC response; carbon nanotube field effect transistors; gate-drain spacer; ohmic contact; CNTFETs; Carbon nanotubes; Computational modeling; Electrons; FETs; Mechanical factors; Ohmic contacts; Organic materials; Poisson equations; Schottky barriers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546704
Filename
1546704
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