Title :
Emitter structures in MOCVD InP solar cells
Author :
Keavney, C. ; Haven, V. ; Vernon, S.
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
InP solar cells have been made by metalorganic chemical vapor deposition (MOCVD) with a graded-junction or front-surface-field structure, in which the doping decreases from 3×1019 cm -3 at the surface to 3×1018 cm-3 at the junction. Improvement was observed in the short-wavelength quantum efficiency and in the overall conversion efficiency relative to standard shallow-homojunction cells, indicating that the graded structure improved collection of carriers generated near the surface. A beginning-of-life conversion efficiency of 19.1% AM0 was measured on a 4-cm2 cell. Measurements on similar cells showed an average of 4.7% degradation after irradiation with 1014-cm-2 electrons at 1 MeV
Keywords :
CVD coatings; III-V semiconductors; indium compounds; solar cells; 19.1 percent; InP solar cells; MOCVD; beginning-of-life conversion efficiency; carrier collection; emitter structures; front-surface-field structure; graded-junction; metalorganic chemical vapor deposition; overall conversion efficiency; semiconductor; short-wavelength quantum efficiency; Chemical vapor deposition; Degradation; Doping; Fingers; Gallium arsenide; Indium phosphide; MOCVD; Metallization; Photovoltaic cells; Region 3;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111606
