• DocumentCode
    2609713
  • Title

    High efficiency 1.0 eV GaInAs bottom solar cell for 3-junction monolithic stack

  • Author

    Schultz, J. ; Klausmeier-Brown, M. ; Ristow, M. ; Al-Jassim, M.

  • Author_Institution
    Varian Res. Center, Palo Alto, CA, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    148
  • Abstract
    High-efficiency 1.0 eV GaInAs cells for ultimate integration into AlGaAs/GaAs/GaInAs 3-junction, 2-terminal monolithic devices are described. An n/p 1.0 eV GaInAs cell has been fabricated with a 4.7% (5.4%) solar conversion efficiency under 1-sun, 25°C, AM0 (AM1.5 G) conditions underneath a simulated GaAs cell. While this GaInAs cell had a AM0 Jsc of 14.6 mA/cm2, at least 16 mA/cm2 is needed to current match the AlGaAs and GaAs upper cells. A recent n-i-p 1.0 eV GaInAs cell achieved a Jsc of 16.0 mA/cm2. Progress toward monolithic integration with the AlGaAs/GaAs upper cells is described
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; solar cells; 1 eV; 2-terminal monolithic devices; 3-junction monolithic stack; 4.7 percent; AlGaAs-GaAs-GaInAs solar cell; GaInAs bottom solar cell; solar conversion efficiency; Absorption; Degradation; Gallium arsenide; Laboratories; Lattices; Monolithic integrated circuits; Photonic band gap; Photovoltaic cells; Solar energy; Stacking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111608
  • Filename
    111608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2609713