Title :
High efficiency 1.0 eV GaInAs bottom solar cell for 3-junction monolithic stack
Author :
Schultz, J. ; Klausmeier-Brown, M. ; Ristow, M. ; Al-Jassim, M.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
High-efficiency 1.0 eV GaInAs cells for ultimate integration into AlGaAs/GaAs/GaInAs 3-junction, 2-terminal monolithic devices are described. An n/p 1.0 eV GaInAs cell has been fabricated with a 4.7% (5.4%) solar conversion efficiency under 1-sun, 25°C, AM0 (AM1.5 G) conditions underneath a simulated GaAs cell. While this GaInAs cell had a AM0 Jsc of 14.6 mA/cm2, at least 16 mA/cm2 is needed to current match the AlGaAs and GaAs upper cells. A recent n-i-p 1.0 eV GaInAs cell achieved a Jsc of 16.0 mA/cm2. Progress toward monolithic integration with the AlGaAs/GaAs upper cells is described
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; solar cells; 1 eV; 2-terminal monolithic devices; 3-junction monolithic stack; 4.7 percent; AlGaAs-GaAs-GaInAs solar cell; GaInAs bottom solar cell; solar conversion efficiency; Absorption; Degradation; Gallium arsenide; Laboratories; Lattices; Monolithic integrated circuits; Photonic band gap; Photovoltaic cells; Solar energy; Stacking;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111608
