DocumentCode :
2609729
Title :
Magnetoresistance technique for mobility extraction in short channel FDSOI transistors
Author :
Chaisantikulwat, W. ; Mouis, M. ; Ghibaudo, G. ; Gallon, C. ; Fenouillet-Beranger, C. ; Maude, D.K. ; Skotnicki, T. ; Cristoloveanu, S.
Author_Institution :
IMEP, Grenoble, France
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
569
Lastpage :
572
Abstract :
In this work, the magnetoresistance technique is used to perform mobility measurements in fully-depleted silicon-on-insulator (FDSOI) MOSFETs. This technique has the advantage of allowing the measurement of carrier mobility from weak to strong inversion without the knowledge of the effective channel length. The mobility dependence on the temperature enables us to analyse the scattering mechanisms in the channel. A new method exploiting the use of magnetoresistance technique to eliminate series resistance effect from the extracted mobility is proposed. The influence of series resistance on the mobility values in weak and strong inversion is then analysed.
Keywords :
MOSFET; carrier mobility; magnetoresistance; silicon-on-insulator; carrier mobility; channel length; fully-depleted silicon-on-insulator MOSFET; magnetoresistance technique; mobility extraction; mobility measurements; scattering mechanisms; series resistance effect; Conductivity; Current density; Electrical resistance measurement; Geometry; MOSFETs; Magnetic analysis; Magnetic field measurement; Magnetic fields; Magnetoresistance; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
Type :
conf
DOI :
10.1109/ESSDER.2005.1546712
Filename :
1546712
Link To Document :
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