Title :
Development of high-performance GaInAsP solar cells for tandem solar cell applications
Author :
Wanlass, M. ; Ward, J. ; Gessert, T. ; Emery, K. ; Horner, G. ; Coutts, T. ; Virshup, G. ; Ristow, M.
Author_Institution :
Solar Energy Res. Inst., Golden, CO, USA
Abstract :
Recent results in the development of high-efficiency, low-bandgap GaInAsP solar cells epitaxially grown and lattice matched on InP substrates are presented. Such cells are intended to be used as optimum bottom cell components in tandem solar cells. Assuming that a GaAs-based top cell is used, computer simulation of the potential bottom cell performance as a function of the cell bandgap and incident spectrum indicates that two particular alloys are desirable: Ga0.47In 0.53As (Eg=0.75 eV) for space applications and Ga0.25In0.75As0.54P 0.4$ (Eg=0.95 eV) for terrestrial applications. In each of these materials, solar cells with new record-level efficiencies have been fabricated. The efficiency boost available to tandem configurations from these low-bandgap cells is discussed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; solar cells; GaInAsP solar cells; bandgap; computer simulation; efficiency; incident spectrum; potential bottom cell performance; tandem solar cells; Application software; Computer simulation; Gallium arsenide; Indium phosphide; Lattices; Lighting; Photonic band gap; Photovoltaic cells; Solar energy; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111613
