DocumentCode :
2610048
Title :
Deeply-grooved silicon concentrator solar cells for use with prismatic covers
Author :
Culik, J. ; Jackson, E. ; Barnett, A.
Author_Institution :
AstroPower Inc., Newark, DE, USA
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
251
Abstract :
Advanced-design 22-sun silicon concentrator solar cells that are compatible with and complementary to Entech prismatic covers are based on a deep, V-grooved silicon structure which reduces the sensitivity to minority carrier diffusion length. Additional benefits of this 3-D structure are reduced front-surface reflectance, increased light absorption and trapping, enhanced carrier collection, and reduced base series resistance. Large-area (38-cm2 aperture) devices produced from 1.25-Ω-cm solar-grade silicon have open-circuit voltages as high as 683 mV and currents over 29 A. Initially, performance was limited by series resistance of the front contact due to the wide (20-mil) gridline finger spacing required to match the prismatic covers. However, cells fabricated with a finer contact grid have fill-factors of up to 0.828 at the design-point concentration
Keywords :
carrier lifetime; elemental semiconductors; silicon; solar cells; solar energy concentrators; 22-sun concentrator solar cells; 29 A; 683 mV; Entech prismatic covers; Si concentrator solar cells; V-grooved structure; carrier collection; fill-factors; front contact; front-surface reflectance; gridline finger spacing; light absorption; light trapping; minority carrier diffusion length; open-circuit voltages; reduced base series resistance; series resistance; Absorption; Contact resistance; Fabrication; Fingers; Laboratories; Photovoltaic cells; Reflectivity; Silicon; Surface resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111626
Filename :
111626
Link To Document :
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