Effect of displacement current on current-voltage characteristics in electrolyte-gated graphene FETs

Author

Jun-Mo Park ; Jong-Ho Lee

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea

fYear

2014

fDate

15-18 Jan. 2014

Firstpage

1

Lastpage

2

Abstract

We investigated drain current-gate voltage (I_D-V_G) and I_D-time (t) characteristics in electrolyte-gated graphene field effect transistors (GFETs). The counterclockwise hysteresis appearing in I_D-V_G curves with fast sweeping rate is caused by the displacement current, and thus limits the operating speed of electrolyte-gated GFETs. By analyzing the I_D-t characteristics of electrolyte-gated GFETs having different areas of the overlap between the gate and the source/drain electrodes, the effect of the parasitic capacitance (C_para) on the displacement current is demonstrated. The characteristics of GFETs with metal gate are also reported to verify the effect of the C_para.

Keywords

electrolytes; field effect transistors; graphene; GFET; counterclockwise hysteresis; current-voltage characteristics; displacement current; drain current-gate voltage characteristics; drain current-time characteristics; drain electrodes; electrolyte-gated graphene field effect transistors; fast sweeping rate; parasitic capacitance; source electrodes; Electrodes; Field effect transistors; Graphene; Hysteresis; Logic gates; Nickel; displacement current; electrolyte-gated graphene field effect transistors (GFETs); parasitic capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Information and Communications (ICEIC), 2014 International Conference on

Conference_Location

Kota Kinabalu

Type

conf

DOI

10.1109/ELINFOCOM.2014.6914429

Filename

6914429