Integrated distributed feedback laser and optical amplifier

Author

Dutta, N.K. ; Lopata, J. ; Logan, R. ; Tanbun-Ek, T.

Author_Institution

AT&T Labs., Murray Hill, NJ, USA

fYear

1991

fDate

5-7 Aug 1991

Firstpage

238

Lastpage

243

Abstract

The fabrication and performance characteristics of an integrated distributed feedback (DFB) laser and optical amplifier structure are described. The structure utilizes semi-insulating Fe doped InP layers for current confinement to the active region, for electrical isolation between the two sections, and for lateral index guiding. The amplified output has a slope of 1 mW/mA of laser current with the amplifier biased at 150 mA, which is a factor of 5 larger than that for a typical laser. The laser emits near 1.55 μm and the spectral width under modulation of the amplified output is considerably smaller than that for a DFB laser for the same on/off ratio

Keywords

distributed feedback lasers; integrated optoelectronics; optical modulation; semiconductor junction lasers; 1.55 micron; DFB laser; InP:Fe layers; active region; current confinement; distributed feedback laser; electrical isolation; fabrication; integrated structure; lateral index guiding; modulation; optical amplifier; performance characteristics; semiinsulating layers; Distributed amplifiers; Distributed feedback devices; Integrated optics; Iron; Laser feedback; Optical amplifiers; Optical device fabrication; Optical feedback; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0491-8

Type

conf

DOI

10.1109/CORNEL.1991.169991

Filename

169991