Characterization of very-thin high-efficiency corrugated silicon solar cells

Author

Uematsu, T. ; Kanda, K. ; Kokunai, S. ; Warabisako, T. ; Iida, S. ; Saitoh, T.

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1990

fDate

21-25 May 1990

Firstpage

299

Abstract

Advanced cells with a corrugated structure which have a potential of over 25% efficiency were successfully fabricated by introducing highly selective hydrazine etching and an improved photoprocess. The best performance obtained to date is 16.9% and 17.4% efficiency for 50 μm and 100 μm thick cells, respectively, with a thick SiO₂ passivation layer at the front and a back-surface field (BSF) structure at the rear of the cell. The density of interface traps (D_H) of the SiO₂ passivation layer fabricated under modified oxidation conditions reveals very small values of the order of 1×10⁹ to 1×10¹⁰ cm^-2-eV^-1. The BSF structure applied to the rear of the cell is assumed to have an effective surface recombination velocity of the order of 1×10² cm/s

Keywords

elemental semiconductors; etching; passivation; silicon; solar cells; 100 micron; 16.9 percent; 17.4 percent; 50 micron; Si solar cells; SiO₂ passivation layer; back-surface field; corrugated silicon solar cells; front surface field; high-efficiency; interface traps; photoprocess; selective hydrazine etching; semiconductor; surface recombination; Corrugated surfaces; Etching; Fabrication; Laboratories; Oxidation; Passivation; Photovoltaic cells; Propellants; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111635

Filename

111635