• DocumentCode
    2610279
  • Title

    The effects of different diffusion sources on silicon solar cell recombination properties

  • Author

    Ruby, Douglas ; McBrayer, John

  • Author_Institution
    Sandia Nat. Lab., Albuquerque, NM, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    311
  • Abstract
    The effects of PH3 and POCl3 diffusion sources on recombination lifetimes and emitter saturation currents are compared. The relative costs associated with each, including material, capital, and safety costs, are examined. It is found that while both sources can produce equivalent high-performance cells, PH3 may have a higher yield in this regard. Because the safety concerns regarding PH3 can be addressed in a cost-effective manner, it has a cost advantage of POCl3 when used for mass production
  • Keywords
    carrier lifetime; diffusion in solids; electron-hole recombination; elemental semiconductors; phosphorus compounds; semiconductor doping; silicon; solar cells; surface diffusion; PH3; POCl3; Si solar cell; diffusion sources; emitter saturation currents; high-performance cells; recombination lifetimes; recombination properties; safety; semiconductor; Costs; Current density; Fabrication; Laboratories; Mass production; Photovoltaic cells; Product safety; Silicon; Surface cleaning; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111638
  • Filename
    111638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2610279