Title :
The effects of different diffusion sources on silicon solar cell recombination properties
Author :
Ruby, Douglas ; McBrayer, John
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
The effects of PH3 and POCl3 diffusion sources on recombination lifetimes and emitter saturation currents are compared. The relative costs associated with each, including material, capital, and safety costs, are examined. It is found that while both sources can produce equivalent high-performance cells, PH3 may have a higher yield in this regard. Because the safety concerns regarding PH3 can be addressed in a cost-effective manner, it has a cost advantage of POCl3 when used for mass production
Keywords :
carrier lifetime; diffusion in solids; electron-hole recombination; elemental semiconductors; phosphorus compounds; semiconductor doping; silicon; solar cells; surface diffusion; PH3; POCl3; Si solar cell; diffusion sources; emitter saturation currents; high-performance cells; recombination lifetimes; recombination properties; safety; semiconductor; Costs; Current density; Fabrication; Laboratories; Mass production; Photovoltaic cells; Product safety; Silicon; Surface cleaning; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111638
