DocumentCode :
26104
Title :
Thermal and Electrical Properties of BCB-Liner Through-Silicon Vias
Author :
Cui Huang ; Liyang Pan ; Ran Liu ; Zheyao Wang
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume :
4
Issue :
12
fYear :
2014
fDate :
Dec. 2014
Firstpage :
1936
Lastpage :
1946
Abstract :
Through-silicon vias (TSVs) using benzocyclobutene (BCB)-liners as the insulator have the potential for reducing the TSV capacitances and the thermal expansion stresses. This paper reports the assessments of BCB-liner TSVs with respect to thermal and electrical properties. The C-V and I-V characteristics are measured at room temperature and at an elevated temperature as high as 125°C to characterize the electrical properties of capacitance and leakage current at different temperatures. Some C-V and I-V features associated with BCB-liners are discussed and the mechanisms are analyzed. Thermal cycling between -65°C and 150°C is performed, and the C-V and I-V characteristics are measured before and after thermal cycling to evaluate the thermomechanical stability of the BCB-liners, and the results show that the C-V and I-V properties are improved after thermal cycling. These preliminary results on the electrical and thermal properties of BCB-liner TSVs show that they have good thermal stability.
Keywords :
capacitance measurement; electric current measurement; electric properties; integrated circuit testing; leakage currents; organic compounds; thermal expansion; thermal stability; three-dimensional integrated circuits; voltage measurement; BCB-liner TSV; BCB-liner through-silicon vias; C-V characteristics; I-V characteristics; TSV capacitances; benzocyclobutene; electrical properties; leakage current; room temperature; temperature -65 degC to 150 degC; thermal cycling; thermal expansion stresses; thermal properties; thermal stability; thermomechanical stability; Capacitance; Dielectrics; Reliability; Silicon; Thermal expansion; Thermal stability; Through-silicon vias; 3-D integration; benzocyclobutene (BCB); reliability; through-silicon via (TSV); through-silicon via (TSV).;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2014.2363659
Filename :
6945811
Link To Document :
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