A general model of the CMOS buried double junction photodetector

Author

Feruglio, S. ; Haned, F. ; Vasilescu, G ; Chouikha, M.B. ; Sou, G. ; Hanna, V Fouad ; Alquie, G.

Author_Institution

LISIF, Pierre & Marie Curie Univ.

fYear

2004

fDate

14-14 May 2004

Firstpage

60

Lastpage

65

Abstract

In this paper, the analytical expressions of the buried double junction (BDJ) leakage currents are proposed. Associated to the photocurrents equations, the BDJ equivalent electrical circuit is deduced. However, in order to not limit this model to the photoconductive mode, an extension of the Ebers-Moll equivalent circuit is adopted. Next, the incremental AC model, as well as the noise model of the device have been obtained. Measurement shows good agreement with simulation, hence validating our model

Keywords

CMOS integrated circuits; equivalent circuits; leakage currents; noise; photodetectors; CMOS buried double junction photodetector; Ebers-Moll equivalent circuit; buried double junction leakage current; incremental AC model; photoconductive mode; photocurrents equation; Circuit noise; Circuit simulation; Dark current; Leakage current; Nonlinear optics; Optical filters; Optical noise; Photoconducting devices; Photodetectors; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Imaging Systems and Techniques, 2004. (IST). 2004 IEEE International Workshop on

Conference_Location

Stresa

Print_ISBN

0-7803-8591-8

Type

conf

DOI

10.1109/IST.2004.1397283

Filename

1397283