DocumentCode
2610549
Title
Precision Crosssectional Analysis of LSI and VLSI Devices
Author
Angelides, Peter G.
Author_Institution
Metallographic Industries, 1190 Miraloma Way, Suite W, Sunnyvale, CA. 94086
fYear
1981
fDate
29677
Firstpage
134
Lastpage
138
Abstract
This is a tutorial paper describing and illustrating a crosssectional procedure for LSI and VLSI devices. The significant results using this procedure are one to one measurements of circuit parameters and a very clear view of the crosssectioned circuit at any given point. It is thus possible to measure with ease dimensions in the 0.3 micron range using the light microscope.
Keywords
Building materials; Circuits; Inorganic materials; Large scale integration; Machining; Metals industry; Microscopy; Packaging; Time measurement; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1981.362985
Filename
4208384
Link To Document