• DocumentCode
    2610555
  • Title

    Key factors limiting the open circuit voltage of n+pp + indium phosphide solar cells

  • Author

    Goradia, Chandra ; Thesling, William ; Weinberg, Irving

  • Author_Institution
    Dept. of Electr. Eng., Cleveland State Univ., OH, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    386
  • Abstract
    The problem of the presently obtained best open-circuit voltage (V oc) values of n+pp+ InP solar cells being considerably smaller than those predicted by basic theory is theoretically investigated. The values of some key parameters in the cells are obtained with a computer model by closely matching theoretical and measured curves for illuminated I-V, log Isc-Voc , and spectral response characteristics of a high-efficiency (17.9%) InP solar cell made by the Spire Corporation. An optimally designed InP solar cell with nearly the best efficiency that it is capable of providing in the n+pp+ shallow homojunction structure is described and modeled using these parameters. The performance parameters of the optimally designed solar cell are calculated, and it is shown that such a cell is capable of having an efficiency of 22.61% under 1 AM0 at 27°C (300 K). Using a baseline solar cell design which is a slightly modified and improved version of the Spire 6 cell, the key factors which limit the open-circuit voltage V oc of such a solar cell are discussed
  • Keywords
    III-V semiconductors; indium compounds; p-n homojunctions; solar cells; 1 AM0; 17.9 percent; 22.61 percent; 27 degC; InP solar cells; Spire 6 cell; computer model; high-efficiency; n+pp+ indium phosphide solar cells; open circuit voltage; shallow homojunction structure; spectral response characteristics; Circuits; Gallium arsenide; Indium phosphide; NASA; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111653
  • Filename
    111653