Title :
Lifetime measurements by open circuit voltage decay in GaAs and InP diodes
Author :
Bhimnathwala, H. ; Tyagi, S. ; Bothra, S. ; Ghandi, S.K. ; Borrego, J.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; minority carriers; solar cells; 1.6 to 34 ns; GaAs; InP; minority carrier lifetime; n-type GaAs; open circuit voltage decay; open-circuit voltage decay method; solar cells; Charge carrier lifetime; Circuits; Doping; Gallium arsenide; Indium phosphide; Lifetime estimation; Measurement techniques; Microwave measurements; Photovoltaic cells; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111654
