DocumentCode :
2610598
Title :
Evaluation of Critical Surface Cleanliness by Secondary Ion Mass Spectroscopy
Author :
Lowry, R.K. ; Masters, R.G.
Author_Institution :
Harris Semiconductor Analytical Laboratory, Melbourne, FL 32901
fYear :
1981
fDate :
29677
Firstpage :
157
Lastpage :
162
Abstract :
Surfaces of a wide variety of IC materials, from raw silicon wafers to package piece parts, must be ultra-clean prior to key manufacturing steps to assure reliable performance of the finished devices. Knowledge of surface cleanliness is essential for optimum process design. Secondary ion mass spectroscopy (SIMS) is utilized to define levels of impurities on critical surfaces at various stages of device manufacture.
Keywords :
Impurities; Mass spectroscopy; Microelectronics; Packaging; Process design; Silicon; Surface cleaning; Surface contamination; Surface finishing; Virtual manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1981.362988
Filename :
4208387
Link To Document :
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