Surface recombination velocity and lifetime in InP measured by transient microwave reflectance

Author

Bothra, S. ; Tyagi, S. ; Ghandhi, S. ; Borrego, J.

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1990

fDate

21-25 May 1990

Firstpage

404

Abstract

Minority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1×10⁶ cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured

Keywords

III-V semiconductors; carrier lifetime; electron-hole recombination; indium compounds; microwave reflectometry; minority carriers; semiconductor epitaxial layers; solar cells; InP solar cells; OMVPE; minority carrier lifetime; organometallic vapor-phase epitaxy; semiconductor; surface pinning; surface recombination velocity; transient microwave reflectance; Charge carrier lifetime; Doping; Indium phosphide; Microwave measurements; Photovoltaic cells; Radiative recombination; Reflectivity; Surface treatment; Velocity measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111656

Filename

111656